Origin ofA- orB-typeNiSii2 determined by inin situtransmission electron microscopy and diffraction during growth
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.60.1158/fulltext
Reference23 articles.
1. Systematic study of 3d transition metal-silicon interfaces by photoemission
2. Evidence for Si diffusion through epitaxial NiSi2grown on Si(111)
3. Formation and structure of epitaxial nickel silicide on Si{111}
4. Effects of surface defects on the orientation of NiSi2formed on Si (111) substrates
5. Crystalline intermediate phases in the formation of epitaxial NiSi2 on Si(111)
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