Crystallization of NiSix in a Body-Centered Cubic Structure during Solid-State Reaction between an Ultrathin Ni Film and Si(001) Substrate at 150

Crystallization of NiSix in a Body-Centered Cubic Structure during Solid-State Reaction between an Ultrathin Ni Film and Si(001) Substrate at 150–350 °C

Published:2013-04-10 Issue:5 Volume:13 Page:1801-1806
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Lu Jun¹,Gao Xindong²,Zhang Shi-Li²,Hultman Lars¹

Affiliation:

1. Thin Film Physics Division, IFM, Linköping University, 58183 Linköping, Sweden

2. Solid-State Electronics, The Ångström Laboratory, Uppsala University, 751 21 Uppsala, Sweden

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg301627y

Reference28 articles.

1. Nucleation of a new phase from the interaction of two adjacent phases: Some silicides

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3. Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films

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