Effects of surface defects on the orientation of NiSi2formed on Si (111) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98035
Reference7 articles.
1. Schottky barrier heights of epitaxial Ni–silicides on Si(111)
2. Schottky-barrier heights of single-crystalNiSi2on Si(111): The effect of a surfacep-njunction
3. The atomic structure of the NiSi2–Si(111) interface
4. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
5. The effects of nucleation and growth on epitaxy in the CoSi2/Si system
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation of high-conductivity NiSi 2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation;Applied Physics A: Materials Science & Processing;1999-03-01
2. Surface phase transformations in the Ni/Si(111) system observed in real time using low‐energy electron microscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-05
3. Growth and characterization of epitaxial Ni and Co silicides;Materials Science Reports;1992-05
4. Epitaxial growth of transition-metal silicides on silicon;Materials Science Reports;1991-03
5. In-situ transmission electron microscopy of NiSi2 formation by molecular beam epitaxy;Surface Science;1989-02
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