Formation of high-conductivity NiSi 2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation-Reference-Cited by-同舟云学术

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Formation of high-conductivity NiSi 2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

Published:1999-03-01 Issue:3 Volume:68 Page:333-337
ISSN:0947-8396
Container-title:Applied Physics A: Materials Science & Processing
language:
Short-container-title:Applied Physics A: Materials Science & Processing

Author:

Gao K.Y.,Liu B.X.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s003390050898.pdf

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Partial transient liquid phase bonding of carbon/carbon composites using Ti–Ni–Al2O3–Si compound as interlayer;Journal of Alloys and Compounds;2013-02

2. INTERESTING RESISTIVITY BEHAVIOR OF THE Ag–Ni–Si SILICIDE FILMS FORMED AT 850°C BY RAPID THERMAL ANNEALING OF THE Ag–Ni/Si FILMS;International Journal of Modern Physics B;2011-11-10

3. Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices;ACS Nano;2011-10-27

4. Formation of nickel disilicide using nickel implantation and rapid thermal annealing;Journal of Electronic Materials;2003-10

5. NiAi1.74Al0.26 and NiSi1.83Ga0.17: Two materials with perfect lattice match to Si;Applied Physics Letters;2003-07-21

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