Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices-Reference-Cited by-同舟云学术

Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices

Author:

Chen Sheng-Yu¹,Yeh Ping-Hung²,Wu Wen-Wei³,Chen Uei-Shin¹,Chueh Yu-Lun¹,Yang Yu-Chen⁴,Gwo Shangir⁴,Chen Lih-Juann¹

Affiliation:

1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, Republic of China

2. Department of Physics, Tam Kang University, New Taipei 251, Taiwan, Republic of China

3. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China

4. Department of Physics, National Tsing Hua University, Hsinchu 300, Taiwan, Republic of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

Reference43 articles.

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