TEM Study of Schottky Junctions in Reconfigurable Silicon Nanowire Devices-Reference-Cited by-同舟云学术

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TEM Study of Schottky Junctions in Reconfigurable Silicon Nanowire Devices

Published:2015-03-25 Issue:2 Volume:18 Page:180-184
ISSN:1438-1656
Container-title:Advanced Engineering Materials
language:en
Short-container-title:Adv. Eng. Mater.

Author:

Banerjee Sayanti¹²,Löffler Markus²,Muehle Uwe³,Berent Katarzyna²⁴⁵,Heinzig André¹,Trommer Jens⁶,Weber Walter¹⁶,Zschech Ehrenfried¹²³

Affiliation:

1. Technische Universität Dresden; Center for Advancing Electronics Dresden (cfaed); Germany

2. Technische Universität Dresden; Dresden Center for Nanoanalysis (DCN); Dresden Germany

3. Fraunhofer-Institut für Keramische Technologien und Systeme - Institutsteil Material Diagnostik; Dresden; Germany

4. Institute of Metallurgy and Material Science; Polish Academy of Science; Krakow Poland

5. AGH University of Science and Technology; Academic Centre for Materials and Nanotechnology; Kraków Poland

6. NaMLab gGmbH; Dresden Germany

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Reconfigurable Silicon Nanowire Transistors

2. Silicon nanowires - a versatile technology platform

3. Silicon nanowires: catalytic growth and electrical characterization

4. Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

5. Silicon to nickel-silicide axial nanowire heterostructures for high performance electronics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In Situ Study of the Interface-Mediated Solid-State Reactions during Growth and Postgrowth Annealing of Pd/a-Ge Bilayers;ACS Applied Materials & Interfaces;2023-02-15

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