In Situ Study of the Interface-Mediated Solid-State Reactions during Growth and Postgrowth Annealing of Pd/a-Ge Bilayers-Reference-Cited by-同舟云学术

In Situ Study of the Interface-Mediated Solid-State Reactions during Growth and Postgrowth Annealing of Pd/a-Ge Bilayers

Published:2023-02-15 Issue:8 Volume:15 Page:11268-11280
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Krause Bärbel¹^ORCID,Abadias Gregory²^ORCID,Babonneau David²^ORCID,Michel Anny²,Resta Andrea³^ORCID,Coati Alessandro³,Garreau Yves³⁴,Vlad Alina³,Plech Anton¹^ORCID,Wochner Peter⁵,Baumbach Tilo¹⁶

Affiliation:

1. Institut für Photonenforschung und Synchrotronstrahlung (IPS), Karlsruher Institut für Technologie, D-76021 Karlsruhe, Germany

2. Institut Pprime, Département Physique et Mécanique des Matériaux, UPR 3346 CNRS, Université de Poitiers, SP2MI, TSA 41123, Cedex 9 86073 Poitiers, France

3. Synchrotron SOLEIL, L’Orme des Merisiers, Départementale 128, 91190 Saint Aubin, France

4. Laboratoire Matériaux et Phénomenes Quantiques, Université Paris Cité, 75013 Paris, France

5. Max Planck Institute for Solid State Physics, Heisenbergstraße 1, D-70569 Stuttgart, Germany

6. Laboratorium für Applikationen der Synchrotronstrahlung (LAS), Karlsruher Institut für Technologie, D-76021 Karlsruhe, Germany

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c20600

Reference58 articles.

1. Nanometer interface and materials control for multilayer EUV-optical applications

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