H coverage dependence of Si(001) homoepitaxy
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.72.1236/fulltext
Reference17 articles.
1. Kinetics of ordered growth of Si on Si(100) at low temperatures
2. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)
3. Effect of hydrogen on surface roughening during Si homoepitaxial growth
4. The initial stages of epitaxial growth of silicon on Si(100)−2 × 1
5. Studies of crystalline defects during the early stages of growth of Si on Si(100) at low temperatures by spot profile analysis of LEED (SPA-LEED)
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