Studies of crystalline defects during the early stages of growth of Si on Si(100) at low temperatures by spot profile analysis of LEED (SPA-LEED)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. LEED studies of surface imperfections
2. Measurement of surface defects by low-energy electron diffraction
3. The Structure of Surfaces II;Henzler,1988
4. Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si(001)
5. A model for Si molecular-beam epitaxy based on scanning tunneling microscopy observations and computer simulations
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1. Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction – Part II 1;Zeitschrift für Kristallographie - Crystalline Materials;1999-11-01
2. High concentration Bi δ-doping layers on Si(001);Applied Surface Science;1998-01
3. Medium energy ion scattering investigation of homoepitaxy on H terminated Si(111);Surface Science;1995-08
4. Recent progress in low-energy electron diffraction: theory and application to semiconductor surfaces;Materials Science and Engineering: R: Reports;1995-06
5. Morphology of thin SrF2 films on InP(111) studied by reflection high-energy electron diffraction;Journal of Crystal Growth;1995-05
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