Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C-Reference-Cited by-同舟云学术

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Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C

Published:2016-08 Issue: Volume:378 Page:301-307
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Deng Xiao,Namboodiri Pradeep,Li Kai,Wang Xiqiao,Stan Gheorghe,Myers Alline F.,Cheng Xinbin,Li Tongbao,Silver Richard M.

Funder

NIST

Chinese Sponsorship Council

US government

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference37 articles.

1. Ohm’s law survives to the atomic scale;Weber;Science,2012

2. Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture;McKibbin;Nanotechnology,2013

3. Spectroscopy of few-electron single-crystal silicon quantum dots;Fuechsle;Nat. Nanotechnol.,2010

4. Scanning capacitance microscopy registration of buried atomic-precision donor devices;Bussmann;Nanotechnology,2015

5. A single-atom transistor;Fuechsle;Nat. Nanotechnol.,2012

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1. Effect of rapid thermal annealing on the surface properties of the microlens arrays machined on monocrystalline silicon;Applied Surface Science;2024-04

2. Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy;Nanotechnology Reviews;2024-01-01

3. Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots;Nature Communications;2022-11-11

4. Si epitaxy on Cl-Si(100);Applied Surface Science;2022-07

5. Low thermal budget high-k/metal surface gate for buried donor-based devices;Journal of Physics: Materials;2020-06-18

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