Mechanisms of equilibrium and nonequilibrium diffusion of dopants in silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.62.1049/fulltext
Reference16 articles.
1. Dopant diffusion in silicon: A consistent view involving nonequilibrium defects
2. Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics
3. Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in silicon
4. Diffusion without Vacancies or Interstitials: A New Concerted Exchange Mechanism
5. Interstitial and vacancy concentrations in the presence of interstitial injection
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