Light-induced creation of metastable paramagnetic defects in hydrogenated polycrystalline silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.71.2733/fulltext
Reference11 articles.
1. Light‐induced dangling bonds in hydrogenated amorphous silicon
2. Deuterium passivation of grain‐boundary dangling bonds in silicon thin films
3. Hydrogenation of transistors fabricated in polycrystalline-silicon films
4. Density of gap states of silicon grain boundaries determined by optical absorption
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