First-principles study on the negative- U behavior of K centers in amorphous Si3N4−x-Reference-Cited by-同舟云学术

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First-principles study on the negative- U behavior of K centers in amorphous Si3N4−x

Published:2018-12-20 Issue:6 Volume:10 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Kang Gijae,Lee Dongheon,Lee Kyeongpung,Kim Jeenu,Han Seungwu

Funder

Ministry of Trade, Industry & Energy

KISTI supercomputing center

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.10.064052/fulltext

Reference79 articles.

1. Overview of emerging nonvolatile memory technologies

2. Electron trap level of hydrogen incorporated nitrogen vacancies in silicon nitride

3. Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

4. Investigation of charge trapping mechanism for nanocrystal-based organic nonvolatile floating gate memory devices by band structure analysis

5. Physical principles and current status of emerging non-volatile solid state memories

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1. Scalable Parallel Algorithm for Graph Neural Network Interatomic Potentials in Molecular Dynamics Simulations;Journal of Chemical Theory and Computation;2024-05-30

2. Switchable Chemical‐Bond Reorganization for the Stable Charge Trapping in Amorphous Silicon Nitride;Advanced Materials;2023-12-14

3. Intrinsic Charge Trapping and Reversible Charge Induced Structural Modifications in a‐Si₃N₄;Advanced Physics Research;2023-11-16

4. Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4);Nanomaterials;2023-08-09

5. Electronic property of intrinsic point defect system on β–Si3N4 (0001) surface;Modern Physics Letters B;2021-06-04

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