Electron trap level of hydrogen incorporated nitrogen vacancies in silicon nitride
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4914163
Reference35 articles.
1. Gap states in silicon nitride
2. H loss mechanism during anneal of silicon nitride: Chemical dissociation
3. Structure, Chemistry, and Electrical Performance of Silicon Oxide-Nitride-Oxide Stacks on Silicon
4. Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride
5. Native defects in hexagonalβ-Si3N4studied using density functional theory calculations
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