H loss mechanism during anneal of silicon nitride: Chemical dissociation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1321730
Reference5 articles.
1. Diffusion of hydrogen in low‐pressure chemical vapor deposited silicon nitride films
2. Chemically Bound Hydrogen in CVD Si3 N 4: Dependence on NH 3 / SiH4 Ratio and on Annealing
3. Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition
4. The hydrogen content of plasma-deposited silicon nitride
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