Electronic Structure of Localized Si Dangling-Bond Defects by Tunneling Spectroscopy
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.60.2527/fulltext
Reference23 articles.
1. Characteristic electronic defects at the Si‐SiO2interface
2. Optical spectroscopy of the trivalent silicon defect at the Si-SiO2interface
3. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
4. Fermi-level position at a semiconductor-metal interface
5. Photoemission studies of atomic redistribution at gold–silicon and aluminum–silicon interfaces
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