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Electronically Nonalloyed State of a Statistical Single Atomic Layer Semiconductor Alloy

  • Published:2012-10-26 Issue:11 Volume:12 Page:5845-5849
  • ISSN:1530-6984
  • Container-title:Nano Letters
  • language:en
  • Short-container-title:Nano Lett.

Author:

Ebert Ph.1,Landrock S.1,Jiang Y.2,Wu K. H.3,Wang E. G.2,Dunin-Borkowski R. E.1

Affiliation:

1. Peter Grünberg Institut, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

2. International Center for Quantum Materials, Peking University, Beijing 100871, People’s Republic of China

3. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Reference21 articles.

1. Band gaps and spin-orbit splitting of ordered and disorderedAlxGa1−xAsandGaAsxSb1−xalloys

2. Chen, A.B.; Sher, A.Semiconductor Alloys: Physics and Materials Engineering;Plenum Press:New York, 1995; p353.

3. Adachi, S.Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors;Wiley:Chichester, 2009; p400.

4. Direct measurement and analysis of the conduction band density of states in dilutedGaAs1−xNxalloys

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