Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces-Reference-Cited by-同舟云学术

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Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Published:2013-09-16 Issue:12 Volume:103 Page:122104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Capiod P.,Xu T.,Nys J. P.,Berthe M.,Patriarche G.,Lymperakis L.,Neugebauer J.,Caroff P.,Dunin-Borkowski R. E.,Ebert Ph.,Grandidier B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4821293

Reference41 articles.

1. Compensating surface defects induced by Si doping of GaAs

2. Fermi-level-pinning-induced impurity redistribution in semiconductors during epitaxial growth

3. Point defects and dopant diffusion in silicon

4. Semiconductor surface diffusion: Nonthermal effects of photon illumination

5. Influence of substrate doping and point defects on Al and Ga interdiffusion in AlSb/GaSb superlattice structures

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2. Insights into the Arsenic Shell Decapping Mechanisms in As/GaAs Nanowires by X-ray and Electron Microscopy;The Journal of Physical Chemistry C;2021-12-15

3. Self-selective formation of ordered 1D and 2D GaBi structures on wurtzite GaAs nanowire surfaces;Nature Communications;2021-10-13

4. Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy;Nanotechnology;2021-01-25

5. Phase-Pure Wurtzite GaAs Nanowires Grown by Self-Catalyzed Selective Area Molecular Beam Epitaxy for Advanced Laser Devices and Quantum Disks;ACS Applied Nano Materials;2020-10-19

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