Phase-Pure Wurtzite GaAs Nanowires Grown by Self-Catalyzed Selective Area Molecular Beam Epitaxy for Advanced Laser Devices and Quantum Disks-Reference-Cited by-同舟云学术

Phase-Pure Wurtzite GaAs Nanowires Grown by Self-Catalyzed Selective Area Molecular Beam Epitaxy for Advanced Laser Devices and Quantum Disks

Published:2020-10-19 Issue:11 Volume:3 Page:11037-11047
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Jansen Marvin M.¹²,Perla Pujitha¹²,Kaladzhian Mane¹²,von den Driesch Nils¹²^ORCID,Janßen Johanna¹²,Luysberg Martina²³,Lepsa Mihail I.⁴²^ORCID,Grützmacher Detlev¹⁴²,Pawlis Alexander¹²^ORCID

Affiliation:

1. Peter-Grünberg-Institute (PGI-9), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

2. JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, 52062 Aachen, Germany

3. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C-1), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

4. Peter-Grünberg-Institute (PGI-10), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c02241

Reference49 articles.

1. Nanowires for Photonics

2. Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires

3. Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission

4. Evolution of GaAs nanowire geometry in selective area epitaxy

5. Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon

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