Evolution of GaAs nanowire geometry in selective area epitaxy
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, International Institute for Carbon-Neutral Energy Research (I2CNER), University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4916347
Reference30 articles.
1. Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array photoanodes
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