Percolation mechanism through trapping/de-trapping process at defect states for resistive switching devices with structure of Ag/SixC1−x/p-Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893016
Reference40 articles.
1. Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
3. Nanoscale Plasmonic Memristor with Optical Readout Functionality
4. Nonvolatile resistive switching memory based on amorphous carbon
5. Temperature-dependent resistive switching of amorphous carbon/silicon heterojunctions
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