Long-Lived Resonance States inn-doped AlGaAs
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.60.2410/fulltext
Reference29 articles.
1. Capture and emission of electrons by the resonant state strongly coupled to the lattice inn-InSb
2. Hot‐electron capture toDXcenters in AlxGa1−xAs at low Al mole fractions (x<0.2)
3. Electron Localization by a Metastable Donor Level inn−GaAs: A New Mechanism Limiting the Free-Carrier Density
4. Investigation of theDXcenter in heavily dopedn-GaAs
5. Deep donor model for the persistent photoconductivity effect
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