Hot‐electron capture toDXcenters in AlxGa1−xAs at low Al mole fractions (x<0.2)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97276
Reference14 articles.
1. Long‐lifetime photoconductivity effect inn‐type GaAlAs
2. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
3. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
4. Origin of ‘‘residual’’ persistent photoconductivity in selectively doped GaAs/AlxGa1−xAs heterojunctions
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