Electron Localization by a Metastable Donor Level inn−GaAs: A New Mechanism Limiting the Free-Carrier Density
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.60.361/fulltext
Reference20 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. Deep donor model for the persistent photoconductivity effect
3. DXcenter: Crossover of deep and shallow states in Si-dopedAlxGa1−xAs
4. The Origin of the DX Center in AlxGa1-xAs
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