Diffusion of Ge below the Si(100) Surface: Theory and Experiment
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.84.2441/fulltext
Reference29 articles.
1. High-mobility Si and Ge structures
2. Vibrationally resolved photoelectron-spin-polarization spectroscopy of HI molecules
3. Ge Epitaxial Overlayers on Si(001) Studied by Surface-Sensitive X-Ray Absorption Fine Structure: Evidence for Strain-Induced Surface Rearrangement
4. Intermixing at Ge/Si(001) interfaces studied by surface energy loss of medium energy ion scattering
5. X-ray photoelectron-diffraction study of intermixing and morphology at the Ge/Si(001) and Ge/Sb/Si(001) interface
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