Final-state effects in photoemission from metal-semiconductor interfaces
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.67.236/fulltext
Reference23 articles.
1. Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation
2. Formation of metal–semiconductor interfaces: From the submonolayer regime to the real Schottky barrier
3. Short range potential variations at a metal-semiconductor interface
4. Photoemission study of reactive rare-earth/semiconductor interfaces: Tm/GaAs(110) and Yb/GaAs(110)
5. Switching of band bending at the nonreactiveCsOx/GaAs(110) interface
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