The image force effect on the barrier height in MOS structures: correlation of the corrected barrier height with temperature and the oxide thickness-Reference-Cited by-同舟云学术

The image force effect on the barrier height in MOS structures: correlation of the corrected barrier height with temperature and the oxide thickness

Published:2000-04 Issue:4-5 Volume:40 Page:763-766
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Salace G,Hadjadj A,Petit C,Ziane Dj

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Kobayashi T, Horiguchi S, Kiuchi K. IEEE Tech Dig Int Electron Device Meet, 1984. p. 414

2. Evaluation of interface potential barrier heights between ultrathin silicon oxides and silicon

3. Current–voltage characteristics of metal-insulator-semiconductor structures via quantum mechanical tunneling

4. Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures

5. Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n+)–oxide–silicon (p) structures: Effect of the oxide thickness

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1. Image Force Effect on Tunneling Current for Ultra Thin High-K Dielectric Material Al₂O₃ Based Metal Oxide Semiconductor Devices;Journal of Nanoelectronics and Optoelectronics;2015-10-01

2. Transport through the Energy Barriers: Transition Probability;Vacuum Nanoelectronic Devices;2015-07-23

3. Effect of Image Force on Tunneling Current for Ultra Thin Oxide Layer Based Metal Oxide Semiconductor Devices;Nanoscience and Nanotechnology Letters;2015-04-01

4. Fowler–Nordheim conduction in polysilicon (n+)-oxide–silicon (p) structures: Limit of the classical treatment in the barrier height determination;Journal of Applied Physics;2001-06-15