Evaluation of interface potential barrier heights between ultrathin silicon oxides and silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336046
Reference10 articles.
1. Oscillations in MOS tunneling
2. Characteristics of Cr-SiO2-nSi tunnel diodes
3. Potential barriers to electron tunnelling in ultra-thin films of SiO2
4. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
5. Dependence of the Si‐SiO2barrier height on SiO2thickness in MOS tunnel structures
Cited by 70 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dynamics of the photoluminescence spectrum and the types and parameters of excitons in a SiNx/SiO2 superlattice;The European Physical Journal Plus;2022-09-21
2. Covalent Grafting of Polyoxometalate Hybrids onto Flat Silicon/Silicon Oxide: Insights from POMs Layers on Oxides;ACS Applied Materials & Interfaces;2020-09-28
3. Lanthanide rare earth oxide thin film as an alternative gate oxide;Materials Science in Semiconductor Processing;2017-09
4. Current through the Barrier Structures;Vacuum Nanoelectronic Devices;2015-07-23
5. Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films;Thin Solid Films;2014-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3