Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n+)–oxide–silicon (p) structures: Effect of the oxide thickness-Reference-Cited by-同舟云学术

Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n+)–oxide–silicon (p) structures: Effect of the oxide thickness

Published:1999-06 Issue:11 Volume:85 Page:7768-7773
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Salace G.,Hadjadj A.,Petit C.,Jourdain M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.370583

Reference15 articles.

1. Characterization of the Si/SiO2 interface morphology from quantum oscillations in Fowler–Nordheim tunneling currents

2. Ultimate limit for defect generation in ultra-thin silicon dioxide

3. Oscillations in MOS tunneling

4. Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures

5. Study of tunneling current oscillation dependence on SiO2 thickness and Si roughness at the Si/SiO2 interface

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