Characterization of the Si/SiO2 interface morphology from quantum oscillations in Fowler–Nordheim tunneling currents-Reference-Cited by-同舟云学术

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Characterization of the Si/SiO2 interface morphology from quantum oscillations in Fowler–Nordheim tunneling currents

Published:1994-01 Issue:1 Volume:12 Page:88
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Poler J. C.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Achievement of a near-perfect smooth silicon surface;Science China Technological Sciences;2013-09-28

2. Valve Metal, Si and Ceramic Oxides as Dielectric Films for Passive and Active Electronic Devices;Advances in Electrochemical Sciences and Engineering;2008-08-20

3. InN/In2O3 peapod nanostructures and conformal conversion templated from InN counterparts via thermal oxidation;Nanotechnology;2007-05-16

4. Fowler-Nordheim Current Oscillations in Si(111)/SiO2/Twisted-Si(111) Tunneling Structures;Japanese Journal of Applied Physics;2006-03-10

5. Parameters affecting the accuracy of oxide thickness prediction in thin metal–oxide–semiconductor structures;Superlattices and Microstructures;2004-01

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