Switching of band bending at the nonreactiveCsOx/GaAs(110) interface-Reference-Cited by-同舟云学术

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Switching of band bending at the nonreactiveCsOx/GaAs(110) interface

Published:1989-03-13 Issue:11 Volume:62 Page:1306-1309
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Laubschat C.,Prietsch M.,Domke M.,Weschke E.,Remmers G.,Mandel T.,Ortega J. E.,Kaindl G.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.62.1306/fulltext

Reference16 articles.

1. The structure and properties of metal-semiconductor interfaces

2. New and unified model for Schottky barrier and III–V insulator interface states formation

3. Schottky barrier formation on iii-v semiconductor surfaces: A critical evaluation

4. Theory of Surface States

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