The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity-Reference-Cited by-同舟云学术

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The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity

Published:2006-04 Issue:12 Volume:252 Page:4104-4109
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Wang X.F.,Zeng Y.P.,Wang B.Q.,Zhu Z.P.,Du X.Q.,Li M.,Chang B.K.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference28 articles.

1. Negative affinity 3–5 photocathodes: Their physics and technology

2. Negative Electron Affinity Devices;Bell,1973

3. The Stanford linear accelerator polarized electron source

4. Interaction of Cs with the GaAs(100) surface

5. Three‐photon photoemission from GaAs–O–Cs negative electron affinity surfaces induced by 2.06 μm nanosecond laser pulses

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical analysis of temporal response of a large exponential-doping transmission-mode GaAs photocathode;Materials Science in Semiconductor Processing;2013-04

2. Negative Electron Affinity AlGaAs/GaAs Photocathodes with Exponential-Doping Structure;Advanced Materials Research;2013-01

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