Short range potential variations at a metal-semiconductor interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. The metal-semiconductor interface: Si (111) and zincblende (110) junctions
2. Schottky Barrier Heights and the Continuum of Gap States
3. Subsurface As-layer formation in Au films deposited on GaAs(001)
4. Interface reaction of gold films with n-type Ga0.7Al0.3As and GaAs
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Final-state effects in photoemission from metal-semiconductor interfaces;Physical Review Letters;1991-07-08
2. Photoemission study of alkali/GaAs(110) interfaces;Zeitschrift f�r Physik B Condensed Matter;1989-03
3. Photoemission study of reactive rare-earth/semiconductor interfaces: Tm/GaAs(110) and Yb/GaAs(110);Physical Review B;1988-11-15
4. Theoretical investigation of energy shifts at the GaAs/Au interface;Solid State Communications;1988-07
5. Formation of Schottky barrier at the Tm/GaAs(110) interface;Physical Review Letters;1988-02-01
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