Theoretical investigation of energy shifts at the GaAs/Au interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. Short range potential variations at a metal-semiconductor interface
2. The metal-semiconductor interface: Si (111) and zincblende (110) junctions
3. Schottky Barrier Heights and the Continuum of Gap States
4. Theory of the Chemical Shift at Relaxed (110) Surfaces of III-V Semiconductor Compounds
5. Many-body effect at metal-semiconductor junctions. II. The self energy and band structure distortion
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Dielectric image potential of charges in 2D quantum structures;Semiconductor Science and Technology;1998-07-01
2. Differences in final state effects for adsorbates on metal and semiconductor surfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-07
3. Final-state effects in photoemission from metal-semiconductor interfaces;Physical Review Letters;1991-07-08
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