Observation of the Triplet Metastable State of Shallow Donor Pairs in AlN Crystals with a Negative-UBehavior: A High-Frequency EPR and ENDOR Study-Reference-Cited by-同舟云学术

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Observation of the Triplet Metastable State of Shallow Donor Pairs in AlN Crystals with a Negative-UBehavior: A High-Frequency EPR and ENDOR Study

Published:2008-06-24 Issue:25 Volume:100 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Orlinskii Sergei B.,Schmidt Jan,Baranov Pavel G.,Bickermann Matthias,Epelbaum Boris M.,Winnacker Albrecht

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.100.256404/fulltext

Reference19 articles.

1. Silicon Vacancy: A Possible "Anderson Negative-U" System

2. Negative-U Properties for Point Defects in Silicon

3. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys

4. Model for the Electronic Structure of Amorphous Semiconductors

5. Recent developments in the III-nitride materials

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1. High-Temperature Diffusion of the Acceptor Impurity Be in AlN;Semiconductors;2023-09

2. Probing Wave Functions of Electrically Active Shallow Level Defects by Means of High-Frequency Pulsed ENDOR in Wide Bandgap Materials: SiC, AlN, ZnO, and AgCl;Applied Magnetic Resonance;2021-08-14

3. On the Ge shallow-to-deep level transition in Al-rich AlGaN;Journal of Applied Physics;2021-08-07

4. On the Raman Scattering, Infrared Absorption, and Luminescence Spectroscopy of Aluminum Nitride Doped with Beryllium;Semiconductors;2021-03

5. Defect-Mediated Transport in Self-Powered, Broadband, and Ultrafast Photoresponse of a MoS2/AlN/Si-Based Photodetector;ACS Applied Electronic Materials;2020-03-19

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