Recent developments in the III-nitride materials
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference67 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
4. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
5. Band-edge exciton states in AlN single crystals and epitaxial layers
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1. Probing Wave Functions of Electrically Active Shallow Level Defects by Means of High-Frequency Pulsed ENDOR in Wide Bandgap Materials: SiC, AlN, ZnO, and AgCl;Applied Magnetic Resonance;2021-08-14
2. On the Raman Scattering, Infrared Absorption, and Luminescence Spectroscopy of Aluminum Nitride Doped with Beryllium;Semiconductors;2021-03
3. Effect of the Beryllium Acceptor Impurity upon the Optical Properties of Single-Crystal AlN;Semiconductors;2020-03
4. Crystallinity Evaluation and Dislocation Observation for an Aluminum Nitride Single-Crystal Substrate on a Wafer Scale;Journal of Electronic Materials;2020-02-28
5. Modification of the Surface Properties of AlxGa1–xN Substrates with Gradient Aluminum Composition Using Wet Chemical Treatments;ACS Omega;2019-07-08
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