Ordering in Thermally Oxidized Silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.93.036106/fulltext
Reference19 articles.
1. A structural study of the thermally oxidized Si(001) wafer by X-ray CTR scattering
2. X-ray diffraction evidence for epitaxial microcrystallinity in thermally oxidized SiO2thin films on the Si(001) surface
3. Observation of a Distributed Epitaxial Oxide in Thermally Grown SiO2on Si(001)
4. Oxidation of silicon
5. Oxidation of silicon: the VLSI gate dielectric
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