Oxidation of silicon: the VLSI gate dielectric
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/10/i=3/a=001/pdf
Reference185 articles.
1. Microroughness Measurements on Polished Silicon Wafers
2. The Growth and Characterization of Very Thin Silicon Dioxide Films
3. In situ observation of water adsorption on Si(100) with scanning tunneling microscopy
4. Theory of high-field electron transport and impact ionization in silicon dioxide
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