Comment on “Identification of Lattice Vacancies on the Two Sublattices of SiC”
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.91.199601/fulltext
Reference13 articles.
1. Identification of Lattice Vacancies on the Two Sublattices of SiC
2. Chemical Environment of Atomic Vacancies in Electron Irradiated Silicon Carbide Measured by a 2D-Doppler Broadening Technique
3. Vacancies and deep levels in electron-irradiated 6HSiC epilayers studied by positron annihilation and deep level transient spectroscopy
4. Optical transitions of the silicon vacancy in6H−SiCstudied by positron annihilation spectroscopy
5. Identification of Vacancies on each Sublattice of SiC by Coincident Doppler Broadening of the Positron Annihilation Photons after Electron Irradiation
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1. Defect identification in semiconductors with positron annihilation: Experiment and theory;Reviews of Modern Physics;2013-11-14
2. Effect of mono vacancy on electron and positron properties of 3C SiC;physica status solidi (b);2010-09-15
3. The effect of the positron distribution and electron–positron correlations on the electron–positron momentum density for SiC;Journal of Physics: Condensed Matter;2008-07-31
4. Decomposition of positron lifetime spectra generated by Monte Carlo method: The case study of 6H silicon carbide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-10
5. Electron-positron momentum distributions associated with isolated silicon vacancies in3C−SiC;Physical Review B;2005-07-08
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