Chemical Environment of Atomic Vacancies in Electron Irradiated Silicon Carbide Measured by a 2D-Doppler Broadening Technique
Author:
Affiliation:
1. Universität Stuttgart
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.389-393.485.pdf
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimization of three-dimensional positron annihilation spectroscopy system (3DPASS) for three-dimensional momentum measurements;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2011-02
2. Simultaneous, coincident 2-D ACAR and DBAR using segmented HPGe detectors incorporating sub-pixel interpolation;Journal of Physics: Conference Series;2010-04-01
3. Slow positron implantation spectroscopy—a tool to characterize vacancy-type damage in ion-implanted 6H-SiC;Vacuum;2005-05
4. Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC;Materials Science Forum;2004-06
5. Decrease in Al acceptor density in Al-doped 4H-SiC by irradiation with 4.6 MeV electrons;Applied Physics Letters;2003-12-15
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