Vacancies and deep levels in electron-irradiated 6HSiC epilayers studied by positron annihilation and deep level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1402144
Reference50 articles.
1. Photoluminescence of Radiation Defects in Ion-Implanted6HSiC
2. Characterization of Deep Level Defects in 4h and 6H SIC Via DLTS, SIMS And MEV E-Beam Irradiation
3. Capture cross sections of electron irradiation induced defects in 6H–SiC
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