Optical transitions of the silicon vacancy in6H−SiCstudied by positron annihilation spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.075206/fulltext
Reference42 articles.
1. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
2. Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure
3. Spin state of vacancies: From magnetic Jahn-Teller distortions to multiplets
4. Silicon vacancy in SiC: A high-spin state defect
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3. PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation;Nuclear Science and Techniques;2017-06-29
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