Breathing-mode relaxation associated with electron emission and capture processes ofEL2 in GaAs
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.68.1582/fulltext
Reference15 articles.
1. Identification of the 0.82-eV Electron Trap,EL2in GaAs, as an Isolated Antisite Arsenic Defect
2. Metastability of the Isolated Arsenic-Antisite Defect in GaAs
3. Stress splitting of theA1→T2transition ofAsGa: Implied absence ofAsiin the structure ofEL2
4. Anion-antisite-like defects in III-V compounds
5. Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation ofEL2?
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1. Phonon-assisted tunnel emission of holes from the double donor level of the EL2 defect;physica status solidi (b);2016-06-06
2. Arsenic antisite defects in p-GaAs grown by metal-organic chemical-vapor deposition and the EL2 defect;Journal of Applied Physics;2009-11-15
3. Formation of Porous GaSb Compound Nanoparticles by Electronic-Excitation-Induced Vacancy Clustering;Physical Review Letters;2008-03-14
4. Process of phase separation induced by low energy electronic excitation in GaSb nanoparticles;Journal of Physics: Conference Series;2008-03-01
5. Pressure dependence of the configurational bistability and deep electronic levels of the MFe center in InP;Physical Review B;2006-04-25
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