Arsenic antisite defects in p-GaAs grown by metal-organic chemical-vapor deposition and the EL2 defect
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3243162
Reference41 articles.
1. Native hole trap in bulk GaAs and its association with the double‐charge state of the arsenic antisite defect
2. Electron irradiation effects inp‐type GaAs
3. Deep states in GaAs grown by molecular beam epitaxy
4. Interaction of hydrogen and deuterium with copper in GaAs
5. Electrical properties of Fe in GaAs
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