Phonon-assisted tunnel emission of holes from the double donor level of the EL2 defect-Reference-Cited by-同舟云学术

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Phonon-assisted tunnel emission of holes from the double donor level of the EL2 defect

Published:2016-06-06 Issue:10 Volume:253 Page:1916-1922
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Wosinski Tadeusz¹

Affiliation:

1. Institute of Physics; Polish Academy of Sciences; Al. Lotnikow 32/46 02-668 Warsaw Poland

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. AsGa+ antisites identified by electron spin resonance as a main interface defect system in thermal GaAs/native oxide structures

3. Identification of AsGaantisites in plastically deformed GaAs

4. Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs;Journal of Applied Physics;2018-05-07

2. Surface acceptor states in MBE-grown CdTe layers;J APPL PHYS;2018

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