Anion-antisite-like defects in III-V compounds
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.65.2046/fulltext
Reference11 articles.
1. Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation ofEL2?
2. Metastability of the Isolated Arsenic-Antisite Defect in GaAs
3. Isolated arsenic-antisite defect in GaAs and the properties ofEL2
4. Electron paramagnetic resonance identification of theSbGaheteroantisite defect in GaAs:Sb
5. Optical properties of the SbGa heteroantisite defect in GaAs:Sb
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