Terahertz Emission from Collapsing Field Domains during Switching of a Gallium Arsenide Bipolar Transistor-Reference-Cited by-同舟云学术

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Terahertz Emission from Collapsing Field Domains during Switching of a Gallium Arsenide Bipolar Transistor

Published:2007-10-26 Issue:17 Volume:99 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Vainshtein Sergey,Kostamovaara Juha,Yuferev Valentin,Knap Wojciech,Fatimy Abdel,Diakonova Nina

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.99.176601/fulltext

Reference16 articles.

1. Microwave oscillations of current in III–V semiconductors

2. Theoretical Study of Gunn Domains and Domain Avalanching

3. Experimental Studies of Gunn Domains and Avalanching

4. S-type current-voltage characteristic in Gunn diodes

5. Ultrahigh field multiple Gunn domains as the physical reason for superfast (picosecond range) switching of a bipolar GaAs transistor

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1. Subnanosecond switching of GaAs diode due to impact ionization in collapsing bipolar Gunn domains;Solid State Communications;2024-02

2. Evaluating the Switching Efficiency of Avalanche S-Diodes in a High-Current Mode;IEEE Transactions on Electron Devices;2024

3. The Effect of Maintaining a High Conductivity State in High-Voltage GaAs Diodes Switched-on in the Delayed Avalanche Breakdown Mode;Technical Physics Letters;2023-12

4. Femtosecond Laser-Induced Emission of Coherent Terahertz Pulses from Ruthenium Thin Films;The Journal of Physical Chemistry C;2023-11-09

5. Bipolar Gunn Effect and Subnanosecond Switching of the High-Voltage GaAs Diodes Initiated by Microsecond Kilovolt Voltage Ramp;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29

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