X-ray-photoelectron-diffraction investigation of strain at the Si/Ge(001) interface
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.63.640/fulltext
Reference18 articles.
1. Do we understand heterojunction band discontinuities?
2. Epitaxial growth and band bending ofn- andp-type Ge on GaAs(001)
3. Structural properties of heteroepitaxial Ge films on a Si(100)‐2×1 surface
4. Diffusion of Si into Ge studied by core level photoemission
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