Epitaxial growth and band bending ofn- andp-type Ge on GaAs(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.7484/fulltext
Reference40 articles.
1. Interface morphology of epitaxial growth of Ge on GaAs and GaAs on Ge by molecular beam epitaxy
2. Structural studies of Ge–GaAs interfaces
3. Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films
4. Electron microscope studies of a Ge–GaAs superlattice grown by molecular beam epitaxy
5. Channeling studies of Ge‐GaAs superlattices grown by molecular beam epitaxy
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