Structural properties of heteroepitaxial Ge films on a Si(100)‐2×1 surface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340067
Reference28 articles.
1. LEED and AES studies of the initial growth of Ge epilayers on GaAs(100)
2. Electronic structure in GaAs/Ge through angle‐resolved photoemission
3. LEED/AES Studies of the Ge on Si(111)7× 7 Surface
4. LEED/AES Studies of the Ge on Si(111)7× 7 Surface
5. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface
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2. Ultrathin films of Ge on the Si(100)2 × 1 surface;Surface and Interface Analysis;2017-11-28
3. Influence of growth and annealing temperature on the strain and surface morphology of Ge995Sn0.005 epilayer;Applied Surface Science;2015-06
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